Instability of Amorphous Oxide Semiconductors via Carrier-Mediated Structural Transition between Disorder and Peroxide State

Ho-Hyun Nahm, Yong-Sung Kim, Dae Hwan Kim

The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O${}_2^{2-}$ peroxide defects. The valence ban…