Wanli Zhang

activity

20122021

most citedScreening for Two dimensional MX

_{2}

semiconductors with possible high room temperature mobility

177 citations · 340 across the 13 of their papers we have counts for

collaborators

Showing 2015Show all

3 papers · 1 filter

cond-mat.mtrl-sci2015★ 30 cited

Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

Wenxu Zhang, Bin Peng, Fangbin Han +4

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is base…

cond-mat.mtrl-sci2015★ 177 cited

Screening for Two dimensional MX $_{2}$ semiconductors with possible high room temperature mobility

Zhishuo Huang, Wenxu Zhang, Wanli Zhang +1

We calculated the electron mobility of 14 two dimensional semiconductors with composition of MX $_{2}$ , where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se an…

cond-mat.mtrl-sci2015★ 6 cited

Collapse of the magnetic moment under pressure of AFe $_{2}$ (A = Y, Zr, Lu and Hf) in the cubic Laves phase

Wenxu Zhang, Wanli Zhang

The electronic structures of four Laves phase iron compounds (e.g. YFe $_{2}$ , ZrFe $_{2}$ , LuFe $_{2}$ and HfFe $_{2}$ ) have been calculated by the state-of-the-art full potential electronic…

Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

Screening for Two dimensional MX2​ semiconductors with possible high room temperature mobility

Collapse of the magnetic moment under pressure of AFe2​ (A = Y, Zr, Lu and Hf) in the cubic Laves phase

Screening for Two dimensional MX $_{2}$ semiconductors with possible high room temperature mobility

Collapse of the magnetic moment under pressure of AFe $_{2}$ (A = Y, Zr, Lu and Hf) in the cubic Laves phase