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cond-mat.mtrl-sci2018
Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface
Y. Du, P. V. Sushko, S. R. Spurgeon +6
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have…
cond-mat.mtrl-sci2012
Cation nonstoichiometry and its impact on nucleation, structure and defect formation in complex oxide heteroepitaxy : LaCrO3 on SrTiO3(001)
L. Qiao, K. H. L. Zhang, M. E. Bowden +6
Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these mat…