activity
20242026
collaborators

5 papers

cond-mat.mes-hall2026

Tuning the memristive response of TaO-based devices with Ag Nanoparticles

R. Leal Martir, A. J. T. van der Ree, M. H. Aguirre +3

Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and ruptur…

cond-mat.mes-hall2025

Modeling Memristor-Based Neural Networks with Manhattan Update: Trade-offs in Learning Performance and Energy Consumption

Walter Quiñonez, María José Sánchez, Diego Rubi

We present a systematic study of memristor based neural networks trained with the hardware-friendly Manhattan update rule, focusing on the trade offs between learning performance a…

cond-mat.mes-hall2025

Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies

Walter Quiñonez, Anouk Goossens, Diego Rubi +2

Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their…

cond-mat.mtrl-sci2025

Oxygen vacancy engineering in pulsed laser deposited BaSnO thin films on SrTiO

Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda +1

We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn, BSO) thin films by precisely controlling the background oxygen pr…

cond-mat.mtrl-sci2024

Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices

Wilson Román Acevedo, Myriam H. Aguirre, Diego Rubi

Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observ…