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cond-mat.mtrl-sci2026
Charge-state control of carbon-related optical absorption in AlN
Helen C. Robinson, Daniil Danilin, Md Shafiqul Islam Mollik +5
Sub-bandgap optical absorption in AlN between 2 eV and 4 eV is widely observed, but its microscopic origin remains contested. Using photo-induced electron paramagnetic resonance (p…
cond-mat.mtrl-sci2026
Self-compensation by silicon centers in ultrawide-bandgap nitrides
John L. Lyons, Darshana Wickramaratne
\textit{DX} behavior limits -type carrier concentrations in ultrawide-bandgap nitrides such as aluminum nitride (AlN) and cubic boron nitride (-BN). Instead of acting as effe…