activity
20112017
most citedField-effect tunneling transistor based on vertical graphene heterostructures

2.6k citations · 6.2k across the 10 of their papers we have counts for

collaborators

10 papers

physics.app-ph2017★ 1 cited

Graphene oxide dielectric permittivity at GHz and its applications for wireless humidity sensing

Xianjun Huang, Ting Leng, Thanasis Georgiou +4

Graphene oxide relative dielectric permittivity, both its real and imaginary parts, have been measured under various humidity conditions at GHz. It is demonstrated that the relativ…

cond-mat.mes-hall2016★ 127 cited

Phase segregation facilitates exfoliation of franckeite crystals to a single unit cell thickness

Matěj Velický, Peter S. Toth, Alexander M. Rakowski +8

Weak interlayer van der Waals interactions in bulk crystals facilitate their mechanical exfoliation to monolayer and few-layer two-dimensional (2D) materials, which exhibit strikin…

cond-mat.mtrl-sci2014★ 177 cited

Heterostructures produced from nanosheet-based inks

F. Withers, H. Yang, L. Britnell +13

The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices.…

cond-mat.mes-hall2014★ 506 cited

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

A. V. Kretinin, Y. Cao, J. S. Tu +18

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as su…

cond-mat.mes-hall2013★ 287 cited

Control of Radiation Damage in MoS2 by Graphene Encapsulation

Recep Zan, Quentin M Ramasse, Rashid Jalil +3

Recent dramatic progress in studying various two-dimensional (2D) atomic crystals and their heterostructures calls for better and more detailed understanding of their crystallograp…

cond-mat.mes-hall2012★ 1.8k cited

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Thanasis Georgiou, Rashid Jalil, Branson D. Belle +12

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the cre…

cond-mat.mes-hall2012★ 33 cited

Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

Y. Kim, J. M. Poumirol, A. Lombardo +9

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the…

cond-mat.mes-hall2012★ 520 cited

Raman spectroscopy of graphene and bilayer under biaxial strain: bubbles and balloons

Jakob Zabel, Rahul R. Nair, Anna Ott +4

In this letter we use graphene bubbles to study the Raman spectrum of graphene under biaxial (e.g. isotropic) strain. Our Gruneisen parameters are in excellent agreement with the t…

cond-mat.mes-hall2011★ 2.6k cited

Field-effect tunneling transistor based on vertical graphene heterostructures

L. Britnell, R. V. Gorbachev, R. Jalil +10

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devi…

cond-mat.mes-hall2011★ 212 cited

Graphene bubbles with controllable curvature

T. Georgiou, L. Britnell, P. Blake +5

Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those wh…