activity
20122026
most citedRealization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

24 citations · 40 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026

ALKEMIE Agent: an autonomous platform for computational materials design

Hongfu Huang, Yuzhe Li, Ao Xu +14

Despite the powerful multi-scale modeling methods and high-throughput infrastructures established in the materials community, real material computation workflows remain fragmented…

cond-mat.mtrl-sci2026

AI2Pot: A scalable and unified framework for machine-learning interatomic potential development and large-scale molecular dynamic simulations

Hanyu Liu, Linggang Zhu, Xuanguang Zhang +3

Machine-learning interatomic potentials (MLIPs) bridge the accuracy of first-principles calculations and the efficiency required for large-scale molecular dynamics (MD) simulations…

cond-mat.mtrl-sci2026

Hidden ordered compound-layer and its tailoring of the electronic/optical property in Ge2Sb2SexTe5-x alloys

Chenxu Yu, Linggang Zhu, Hanyu Liu +4

Ge2Sb2SexTe5-x (GSST) alloys represent an emerging class of phase-change materials for integrated photonics. However, the microscopic origins underlying their superior performance…

cond-mat.mtrl-sci2017★ 6 cited

Origin of the abnormal diffusion of transition metal in rutile

Linggang Zhu, Graeme J. Ackland, Qing-Miao Hu +2

Diffusion of dopants in rutile is the fundamental process that determines the performance of many devices in which rutile is used. The diffusion behavior is known to be highly samp…

cond-mat.mtrl-sci2016

Insight into the Role of Oxygen in Phase-Change Material GeTe

Linggang Zhu, Zhen Li, Jian Zhou +2

Oxygen is widely used to tune the performance of chalcogenide phase-change materials in the usage of phase-Change random access memory (PCRAM) which is considered as the most promi…

cond-mat.mtrl-sci2015★ 24 cited

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

Linggang Zhu, Jian Zhou, Zhonglu Guo +1

Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new m…

cond-mat.mtrl-sci2012★ 10 cited

Binding of an oxide layer to a metal: the case of Ti(10-10)/TiO2(100)

Linggang Zhu, Graeme J. Ackland

We study the chemical nature of the bonding of an oxide layer to the parent metal. In order to disentangle chemical effects from strain/misfit, Ti(100)/TiO(100) inte…