most cited20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

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cond-mat.mtrl-sci2025

Structural optimization of lattice-matched Sc0.14Al0.86N/GaN superlattices for photonic applications

Rajendra Kumar, Govardan Gopakumar, Zain Ul Abdin +2

ScxAl1-xN is an emerging III-nitride material known for its high piezoelectric coefficient and ferroelectric properties. Integration of wide-bandgap ScxAl1-xN with GaN is particula…