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20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
J. J. Gu, X. W. Wang, J. Shao +4
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) archite…
Channel Length Scaling of MoS2 MOSFETs
Han Liu, Adam T. Neal, Peide D. Ye
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We…
Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Jiangjiang J. Gu, Heng Wu, Yiqun Liu +3
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport propertie…