56 citations · 98 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2014★ 56 cited
Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
C. Edmunds, J. Shao, M. Shirazi-HD +2
We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agre…
cond-mat.mes-hall2012★ 32 cited
20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
cond-mat.mes-hall2012★ 10 cited
III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
J. J. Gu, X. W. Wang, J. Shao +4
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) archite…