L. C. Gomes

activity

20122024

most citedStability of extended defects on boron nitride and graphene monolayers: the role of chemical environment

2 citations · 2 across the 2 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2024

Predicting BN analogue of 8-16-4 graphyne: \textit{In silico} insights into its structural, electronic, optical, and thermal transport properties

Isaac M. Félix, Jessé M. Pontes, Djardiel S. Gomes +5

The boron nitride (BN) analogue of 8-16-4 graphyne, termed SBNyne, is proposed for the first time. Its physical properties were explored using first-principles calculations and cla…

cond-mat.mtrl-sci2020

Understanding Cu Incorporation in the $C u_{2x} H g_{2 - x} GeT e_{4}$ Structure using Resonant X-ray Diffraction

Ben L. Levy-Wendt, Brenden R. Ortiz, Lìdia C. Gomes +5

The ability to control carrier concentration based on the extent of Cu solubility in the $C u_{2x} H g_{2 - x} GeT e_{4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{…

cond-mat.mtrl-sci2018

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

James L. Collins, Anton Tadich, Weikang Wu +11

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In thi…

Predicting BN analogue of 8-16-4 graphyne: \textit{In silico} insights into its structural, electronic, optical, and thermal transport properties

Understanding Cu Incorporation in the Cu2x​Hg2−x​GeTe4​ Structure using Resonant X-ray Diffraction

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

Understanding Cu Incorporation in the $C u_{2x} H g_{2 - x} GeT e_{4}$ Structure using Resonant X-ray Diffraction