most citedGrowth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

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cond-mat.mtrl-sci2012★ 39 cited

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Handong Li, Lei Gao, Hui Li +4

The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi…