32 citations · 43 across the 6 of their papers we have counts for
6 papers
Ultrafast Self-powered Visible Blind UV Photodetectors based on MgZnO Vertical Schottky Junction in Crossbar Geometry
Amit K Das, V. K. Sahu, R. S. Ajimsha +1
In order to achieve ultrafast response in MgZnO based self-powered Schottky type photodetectors, it is crucial to decrease both the junction capacitance and carrier transit time. T…
Enhanced energy harvesting from shadow-effect: mechanism and a new device geometry
Amit K. Das, V. K. Sahu, R. S. Ajimsha +1
Energy harvesting from shadow-effect is the generation of electrical power from a Schottky junction when a part of it is kept in shadow and the remaining under illumination. It has…
Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction
Tanveer A. Dar, Arpana Agrawal, Ram J. Choudhary +3
The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its c…
Structural phase transition of ternary high-k dielectric SmGdO3: Evidence from ADXRD and Raman Spectroscopic Studies
Yogesh Sharma, Pankaj Misra, Satyaprakash Sahoo +3
High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a rev…
Disorder-driven carrier transport in atomic layer deposited ZnO thin films
D. Saha, Amit. K. Das, R. S. Ajimsha +2
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical…
Studies on temperature dependent semiconductor to metal transitions in ZnO thin films sparsely doped with Al
Amit K. Das, P. Misra, R. S. Ajimsha +4
For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphi…