32 citations · 34 across the 6 of their papers we have counts for
6 papers
Ultrafast Self-powered Visible Blind UV Photodetectors based on MgZnO Vertical Schottky Junction in Crossbar Geometry
Amit K Das, V. K. Sahu, R. S. Ajimsha +1
In order to achieve ultrafast response in MgZnO based self-powered Schottky type photodetectors, it is crucial to decrease both the junction capacitance and carrier transit time. T…
Enhanced energy harvesting from shadow-effect: mechanism and a new device geometry
Amit K. Das, V. K. Sahu, R. S. Ajimsha +1
Energy harvesting from shadow-effect is the generation of electrical power from a Schottky junction when a part of it is kept in shadow and the remaining under illumination. It has…
Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition
S. D. Singh, R. S. Ajimsha, C. Mukherjee +3
Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect…
Quantum corrections to conductivity in Si doped ZnO thin films
Amit K. Das, R. S. Ajimsha
Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films f…
Disorder-driven carrier transport in atomic layer deposited ZnO thin films
D. Saha, Amit. K. Das, R. S. Ajimsha +2
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical…
Studies on temperature dependent semiconductor to metal transitions in ZnO thin films sparsely doped with Al
Amit K. Das, P. Misra, R. S. Ajimsha +4
For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphi…