Insulating Electronic States Near the Dirac Point Arising from Twisted Stacking and Curvature in 3D Nanoporous Graphene

Yoichi Tanabe, Hayato Sueyoshi, Samuel Jeong +3

Twist-stacked graphene with a twist angle $\hat{I}¸$ of $\sim 5^{\circ }$--$30^{\circ }$ retains two-dimensional monolayer graphene-like Dirac states near the Dirac point. In three-dimensional…