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20052023
most citedHigh mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

258 citations · 373 across the 12 of their papers we have counts for

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cond-mat.mtrl-sci2013★ 258 cited

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

Wei Wu, Debtanu De, Su-Chi Chang +4

We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobil…