5 papers
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
Anisotropic spin-blockade leakage current in a Ge hole double quantum dot
Zhanning Wang, S. D. Liles, Joe Hillier +2
Group IV quantum dot hole spin systems, exhibiting strong spin-orbit coupling, provide platforms for various qubit architectures. The rapid advancement of solid-state technologies…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
Probing Fermi surface parity with spin resolved transverse magnetic focussing
M. J. Rendell, S. D. Liles, S. Bladwell +6
Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi su…