most citedIntrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

60 citations · 60 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2018

Probing alloy formation using different excitonic species: The particular case of InGaN

Gordon Callsen, Raphaël Butté, Nicolas Grandjean

Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material pa…

cond-mat.mtrl-sci2013★ 60 cited

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Guillaume Perillat-Merceroz, Gatien Cosendey, Jean-François Carlin +2

Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applica…