134 citations · 510 across the 6 of their papers we have counts for
9 papers
Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field
K. Zou, Fan Zhang, C. Clapp +2
We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of th…
Integrating Functional Oxides with Graphene
X. Hong, K. Zou, A. M. DaSilva +2
Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and con…
Evidence for spin-flip scattering and local moments in dilute fluorinated graphene
X. Hong, K. Zou, B. Wang +2
The issue of whether local magnetic moments can be formed by introducing adatoms into graphene is of intense research interest because it opens the window to fundamental studies of…
Transport in gapped bilayer graphene: the role of potential fluctuations (Supplementary Information)
K. Zou, J. Zhu
Online Supplementary Information for arXiv:1008.0783
Transport in gapped bilayer graphene: the role of potential fluctuations
K. Zou, J. Zhu
We employ a dual-gated geometry to control the band gap Δin bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220…
Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3
X. Hong, J. Hoffman, A. Posadas +3
We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectr…