Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion

Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath +3

A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak…