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19982009
most citedElectronic structure of the MO oxides (M=Mg, Ca, Ti, V) in the GW approximation

84 citations · 581 across the 25 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

13 papers · 1 filter

cond-mat.mtrl-sci2007

Development of simulation package for atomic processes of ultra-large-scale system based on electronic structure theory

Hitoshi Nitta, Naoki Watanabe, Takeo Hoshi +1

An early-stage version of simulation package is developed for electronic structure calculation and dynamics of atom process in large-scale systems, particularly, nm-scale or 10nm-s…

cond-mat.mtrl-sci2006★ 35 cited

Two-Stage Formation Model and Helicity of Gold Nanowires

Yusuke Iguchi, Takeo Hoshi, Takeo Fujiwara

A model for formation of helical multishell gold nanowires is proposed and is confirmed with the quantum mechanical molecular dynamics simulations. The model can explain the magic…

cond-mat.mtrl-sci2006

Draw out Carbon Nanotube from Liquid Carbon

Shuang Zhang, Takeo Hoshi, Takeo Fujiwara

Carbon nanotube (CNT) is expected for much more important and broader applications in the future, because of its amazing electrical and mechanical properties. However, today, the p…

cond-mat.mtrl-sci2005★ 6 cited

Large-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon

T. Hoshi, R. Takayama, Y. Iguchi +1

Several methods are constructed for large-scale electronic structure calculations. Test calculations are carried out with up to 10^7 atoms. As an application, cleavage process of s…

cond-mat.mtrl-sci2004★ 31 cited

Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure alculations; surface reconstruction, step and bending

Takeo Hoshi, Yusuke Iguchi, Takeo Fujiwara

The 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps sho…

cond-mat.mtrl-sci2004★ 10 cited

The electronic structure around As antisite near (110) surface of GaAs

Yusuke Iguchi, Takeo Fujiwara, Akira Hida +1

The electronic structure around a single As antisite in GaAs is investigated in bulk and near the surface both in the stable and the metastable atomic configurations. The most char…

cond-mat.mtrl-sci2004★ 43 cited

Krylov Subspace Method for Molecular Dynamics Simulation based on Large-Scale Electronic Structure Theory

Ryu Takayama, Takeo Hoshi, Takeo Fujiwara

For large scale electronic structure calculation, the Krylov subspace method is introduced to calculate the one-body density matrix instead of the eigenstates of given Hamiltonian.…

cond-mat.mtrl-sci2003★ 18 cited

Million-atom molecular dynamics simulation by order-N electronic structure theory and parallel computation

Masaaki Geshi, Takeo Hoshi, Takeo Fujiwara

Parallelism of tight-binding molecular dynamics simulations is presented by means of the order-N electronic structure theory with the Wannier states, recently developed (J. Phys. S…

cond-mat.mtrl-sci2002★ 35 cited

Electronic Structure of Transition Metals Fe, Ni and Cu in the GW Approximation

Atsushi Yamasaki, Takeo Fujiwara

The quasiparticle band structures of 3d transition metals, ferromagnetic Fe, Ni and paramagnetic Cu, are calculated by the GW approximation. The width of occupied 3d valence band,…

cond-mat.mtrl-sci2002★ 23 cited

Dynamical brittle fractures of nanocrystalline silicon using large-scale electronic structure calculations

Takeo Hoshi, Takeo Fujiwara

A hybrid scheme between large-scale electronic structure calculations is developed and applied to nanocrystalline silicon with more than 10 atoms. Dynamical fracture processes…

cond-mat.mtrl-sci2001★ 84 cited

Electronic structure of the MO oxides (M=Mg, Ca, Ti, V) in the GW approximation

Atsushi Yamasaki, Takeo Fujiwara

The quasiparticle band structures of nonmagnetic monoxides, MO (M=Mg, Ca, Ti, and V), are calculated by the GW approximation. The band gap and the width of occupied oxygen 2p state…

cond-mat.mtrl-sci1999★ 22 cited

Theory of composite-band Wannier states and order-N electronic-structure calculations

Takeo Hoshi, Takeo Fujiwara

From the order-N electronic-structure formulation, a Hamiltonian is derived, of which lowest eigen state is the generalized or composite-band Wannier state. This Hamiltonian maps t…

cond-mat.mtrl-sci1998★ 55 cited

Fermi surfaces and anomalous transport in quasicrystals

S. Roche, T. Fujiwara

Fermi surfaces of several quasicrystalline approximants are calculated by means of ab-initio methods which enable direct comparison with dHvA experiments. A criterion for anomalous…