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cond-mat.mes-hall2012★ 1.8k cited
Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
Thanasis Georgiou, Rashid Jalil, Branson D. Belle +12
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the cre…
cond-mat.mes-hall2012★ 920 cited
Atomically thin boron nitride: a tunnelling barrier for graphene devices
Liam Britnell, Roman V. Gorbachev, Rashid Jalil +12
We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well…