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W. Fang

3 papers hereh-index 286.8k citations52 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • cond-mat.mes-hall1
same name
  • W. Fang — 162 papers, h 13
  • W. Fang — 118 papers, h 70
  • W. Fang — 63 papers, h 5
  • W. Fang — 61 papers, h 5
  • W. Fang — 59 papers, h 2
  • W. Fang — 17 papers, h 37

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedLarge-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

70 citations · 70 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2018

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Fei Hui, Wenjing Fang, Wei Sun Fang +7

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. grap…

cond-mat.mtrl-sci2013★ 70 cited

Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

Han Wang, Lili Yu, Yi-Hsien Lee +8

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-l…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.