106 citations · 362 across the 7 of their papers we have counts for
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cond-mat.mes-hall2015★ 101 cited
Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
E. E. Vdovin, A. Mishchenko, M. T. Greenaway +12
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages be…
cond-mat.mes-hall2015★ 106 cited
Effect of structural relaxation on the electronic structure of graphene on hexagonal boron nitride
G. J. Slotman, M. M. van Wijk, Pei-Liang Zhao +3
We performed calculations of electronic, optical and transport properties of graphene on hBN with realistic moiré patterns. The latter are produced by structural relaxation using a…