307 citations · 1.1k across the 8 of their papers we have counts for
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Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…
Periodically modulated geometric and electronic structure of graphene on Ru(0001)
B. Borca, S. Barja, M. Garnica +4
We report here on a method to fabricate and characterize highly perfect, periodically rippled graphene monolayers and islands, epitaxially grown on single crystal metallic substrat…