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Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
Jason S. Ross, Pasqual Rivera, John Schaibley +9
Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the…
Photo-Nernst current in graphene
Helin Cao, Grant Aivazian, Zaiyao Fei +3
Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are…
Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth
John R. Schaibley, Todd Karin, Hongyi Yu +9
Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these s…
Lateral heterojunctions within monolayer semiconductors
Chunming Huang, Sanfeng Wu, Ana M. Sanchez +7
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creat…
Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
Pasqual Rivera, John R. Schaibley, Aaron M. Jones +9
Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technologic…
Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
Jason S. Ross, Philip Klement, Aaron M. Jones +9
Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their effi…