activity
20132020
most citedEpitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

237 citations · 864 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.str-el2020★ 9 cited

Robust ferromagnetism in highly strained SrCoO3 thin films

Yujia Wang, Qing He, Wenmei Ming +15

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong…

cond-mat.mtrl-sci2015★ 46 cited

Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering

Wenmei Ming, Z. F. Wang, Miao Zhou +2

Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized…

cond-mat.mtrl-sci2014★ 237 cited

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Miao Zhou, Wenmei Ming, Zheng Liu +3

Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topologic…

cond-mat.mtrl-sci2014★ 102 cited

sd2 Graphene: Kagome Band in Hexagonal lattice

Miao Zhou, Zheng Liu, Wenmei Ming +2

Graphene, made of sp2 hybridized carbon, is characterized with a Dirac band, representative of its underlying 2D hexagonal lattice. Fundamental understanding of graphene has recent…

cond-mat.mtrl-sci2014★ 8 cited

Tuning Fe Nucleation Density with Charge Doping of Graphene Substrate

Wenmei Ming, Feng Liu

We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investiga…

cond-mat.mtrl-sci2014

Giant Rashba-Spin Splitting of Bi(111) Bilayer on Large Band Gap InSe

Wenmei Ming, Z. F. Wang, Feng Liu

Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of InSe(0001) with…