activity
20132026
most citedUnconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

42 citations · 100 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.supr-con2026

2.4 GHz Flip-flop Device within Nonequilibrium Superconducting Diode

Xiangyu Bi, Hongyi Li, Aoshen Yang +12

Superconducting diode effect exhibits asymmetric critical supercurrent and has profound implications for condensed matter physics. The technical appeals of such superconducting dio…

cond-mat.mes-hall2024

Superionic Fluoride Gate Dielectrics with Low Diffusion Barrier for Advanced Electronics

Kui Meng, Zeya Li, Peng Chen +14

Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown…

cond-mat.mes-hall2024★ 20 cited

Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect

Jingyue Wang, Junwei Huang, Daniel Kaplan +17

In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of thes…

cond-mat.mtrl-sci2022

Continuous Electrical Manipulation of Magnetic Anisotropy and Spin Flopping in van der Waals Ferromagnetic Devices

Ming Tang, Junwei Huang, Feng Qin +19

Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices wit…

cond-mat.mes-hall2022★ 42 cited

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Ling Zhou, Junwei Huang, Lukas Windgaetter +16

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter…

cond-mat.mtrl-sci2020★ 1 cited

Large magnetoresistance observed in α-Sn/InSb heterostructures

Yuanfeng Ding, Huanhuan Song, Junwei Huang +7

In this study, we report the epitaxial growth of a series of α-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualitie…