The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

D. R. McCamey, M. Francis, J. C. McCallum +3

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…