Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

YongJin Cho, Changkai Yu, Huili Grace Xing +1

This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680${}^{\circ }$C by molecular beam epitaxy on a Ga-pola…