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Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4
Fanjie Wang, Yonggang Xu, Lei Mu +6
Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phospho…
Exceptionally high phonon-limited carrier mobility in BX (X = P, As, Sb) monolayers
Shiru Song, Shixu Liu, Yuting Sun +2
Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D dev…
Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands
Shiru Song, Ji-Hui Yang, Xin-Gao Gong
It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decr…
Accurately Determining Defect Ionization Energy in Low-Dimensional Semiconductors: Charge Corrected Jellium Model
Guo-jun Zhu, Xin-Gao Gong, Ji-Hui Yang
Determination of defect ionization energy in low-dimensional semiconductors has been a long-standing unsolved problem in first-principles defect calculations because the commonly u…
Dimensionality-suppressed chemical doping in 2D semiconductors: the cases of phosphorene, MoS2, and ReS2 from first-principles
Ji-Hui Yang, Boris. I. Yakobson
In spite of great appeal of two-dimensional (2D) semiconductors for electronics and optoelectronics, to achieve required charge carrier concentrations by means of chemical doping r…
Unusual negative formation enthalpies and atomic ordering in isovalent alloys of transition metal dichalcogenide monolayers
Ji-Hui Yang, Boris I. Yakobson
Common substitutional isovalent semiconductor alloys usually form disordered metastable phases with positive excess formation enthalpies (ΔH). In contrast, monolayer alloys of tran…