550 citations · 1.7k across the 29 of their papers we have counts for
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Strongly correlated proton-doped perovskite nickelate memory devices
Koushik Ramadoss, Fan Zuo, Yifei Sun +8
We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching spee…
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang +8
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec…
Extent of Variation Resilience in Strained CMOS: From Transistors to Digital Circuits
Ahmad Ehteshamul Islam, Charles Augustine, Kaushik Roy +1
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as a…
An Illumination- and Temperature-Dependent Analytical Model for Copper Indium Gallium Diselenide (CIGS) Solar Cells
Xingshu Sun, Timothy Silverman, Rebekah Garris +2
In this paper, we present a physics-based analytical model for CIGS solar cells that describes the illumination- and temperature-dependent current-voltage (I-V) characteristics and…
A Physics-based Analytical Model for Perovskite Solar Cells
Xingshu Sun, Reza Asadpour, Wanyi Nie +2
Perovskites are promising next-generation absorber materials for low-cost and high-efficiency solar cells. Although perovskite cells are configured similar to the classical solar c…
Prospects of Hysteresis-Free Abrupt Switching (0mV/dec) in Landau Switches
Ankit Jain, Muhammad Ashraful Alam
Sub-threshold swing (S) defines the sharpness of ON-OFF switching of a Field Effect Transistor (FET) with S=0 corresponding to abrupt switching characteristics. While thermodynamic…