activity
20132023
most citedSkyrmions at room temperature : From magnetic thin films to magnetic multilayers

1.2k citations · 2.5k across the 24 of their papers we have counts for

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Showing 2016Show all

6 papers · 1 filter

cond-mat.mes-hall2016★ 346 cited

Current-induced skyrmion generation and dynamics in symmetric bilayers

Ales Hrabec, Joao Sampaio, Mohamed Belmeguenai +7

Magnetic skyrmions are textures behaving as quasiparticles which are topologically different from other states. Their discovery in systems with broken inversion symmetry sparked th…

cond-mat.mes-hall2016★ 1 cited

Inside the perpendicular spin-torque memristor

Steven Lequeux, Joao Sampaio, Vincent Cros +6

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to th…

cond-mat.mes-hall2016★ 6 cited

Twist in the bias-dependence of spin-torques in magnetic tunnel junctions

Sören Boyn, João Sampaio, Vincent Cros +5

The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bia…

cond-mat.mes-hall2016★ 95 cited

Very large domain wall velocities in Pt/Co/Gd trilayers with Dzyaloshinskii-Moriya interaction

Thai Ha Pham, J. Vogel, J. Sampaio +9

We carried out measurements of domain wall (DW) velocities driven by magnetic field pulses in symmetric Pt/Co/Pt and asymmetric Pt/Co/AlOx, Pt/Co/GdOx and Pt/Co/Gd trilayers with u…

cond-mat.mes-hall2016★ 208 cited

A skyrmion-based spin-torque nano-oscillator

F. Garcia-Sanchez, J. Sampaio, N. Reyren +2

A model for a spin-torque nano-oscillator based on the self-sustained oscillation of a magnetic skyrmion is presented. The system involves a circular nanopillar geometry comprising…

cond-mat.mes-hall2016★ 45 cited

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan +5

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As…