activity
20132025
most cited2024 roadmap on 2D topological insulators

61 citations · 223 across the 24 of their papers we have counts for

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12 papers · 1 filter

cond-mat.mes-hall2024★ 61 cited

2024 roadmap on 2D topological insulators

Bent Weber, Michael S Fuhrer, Xian-Lei Sheng +22

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band struct…

cond-mat.mes-hall2024

Imaging topological polar structures in marginally twisted 2D semiconductors

Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella +16

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique proper…

cond-mat.mes-hall2023

Floquet engineering in the presence of optically excited carriers

Mitchell A. Conway, Jonathan O. Tollerud, Thi-Hai-Yen Vu +5

Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure…

cond-mat.mes-hall2023★ 8 cited

Effects of Floquet Engineering on the Coherent Exciton Dynamics in Monolayer WS

Mitchell A. Conway, Stuart K. Earl, Jack B. Muir +7

Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast…

cond-mat.mes-hall2022★ 11 cited

Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator

Pin Lyu, Joachim Sødequist, Xiaoyu Sheng +8

Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune th…

cond-mat.mes-hall2021★ 2 cited

Unidirectional magneto-transport of linearly dispersing topological edge states

Zhanning Wang, Pankaj Bhalla, Mark Edmonds +2

Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample,…