Hao Xu

activity

20242026

collaborators

3 papers

cs.CL2026

VRM: Teaching Reward Models to Understand Authentic Human Preferences

Biao Liu, Ning Xu, Junming Yang +2

Large Language Models (LLMs) have achieved remarkable success across diverse natural language tasks, yet the reward models employed for aligning LLMs often encounter challenges of…

physics.app-ph2025

Unveiling Retention Loss Mechanism in FeFETs with Gate-side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization

Runhao Han, Tao Hu, Jia Yang +10

We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semicondu…

cond-mat.mtrl-sci2024

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure

Tao Hu, Xinpei Jia, Runhao Han +17

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al $_{2}$ O $_{3}$ /Hf$_{0.5…

VRM: Teaching Reward Models to Understand Authentic Human Preferences

Unveiling Retention Loss Mechanism in FeFETs with Gate-side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization

Effect of Top Al2​O3​ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2​O3​/Hf0.5​Zr0.5​O2​/SiOx​/Si (MIFIS) Gate Structure

Effect of Top Al $_{2}$ O $_{3}$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al $_{2}$ O $_{3}$ /Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{x}$ /Si (MIFIS) Gate Structure