234 citations · 346 across the 4 of their papers we have counts for
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cond-mat.mes-hall2013
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
T. Obata, K. Takeda, J. Kamioka +6
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si chan…
cond-mat.mes-hall2013★ 30 cited
Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
K. Takeda, T. Obata, Y. Fukuoka +5
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe het…