233 citations · 439 across the 9 of their papers we have counts for
9 papers
Non-volatile optical phase shift in ferroelectric hafnium zirconium oxide
Kazuma Taki, Naoki Sekine, Kouhei Watanabe +6
A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics…
Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress
Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the…
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach
Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the F…
Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor
Rui Tang, Kouhei Watanabe, Masahiro Fujita +5
Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can r…
Ultrahigh-sensitivity optical power monitor for Si photonic circuits
Takaya Ochiai, Kei Sumita, Shuhei Ohno +5
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-t…
Si microring resonator crossbar array for on-chip inference and training of optical neural network
Shuhei Ohno, Kasidit Toprasertpong, Shinichi Takagi +1
Deep learning is one of the most advancing technologies in various fields. Facing the limits of the current electronics platform, optical neural networks (ONNs) based on Si program…
Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors
Kasidit Toprasertpong, Kento Tahara, Mitsuru Takenaka +1
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from stand…
High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer
Jae-Hoon Han, Frederic Boeuf, Shinichi Takagi +1
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulato…
Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
Younghyun Kim, Mitsuru Takenaka, Takenori Osada +2
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these fre…