279 citations · 963 across the 29 of their papers we have counts for
9 papers · 1 filter
Strain-engineered high-temperature ferromagnetic Oxygen-substituted NaMnF3 from first principles
Wenning Ren, Kuijuan Jin, Erjia Guo +6
Using first-principles calculations, we investigated the magnetic, electronic, and structural properties of oxygen-substituted NaMnF3 (NaMnF1.5O1.5) with in-plane biaxial strain. F…
Enhanced valley polarization in WS/LaMnO heterostructure
Jianchen Dang, Mingwei Yang, Xin Xie +6
Monolayer transition metal dichalcogenides have attracted great attentions for potential applications in valleytronics. However, the valley polarization degree is usually not high…
Room-temperature ferromagnetism at an oxide/nitride interface
Qiao Jin, Zhiwen Wang, Qinghua Zhang +26
Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compound…
Magnetoresistance in Metallic Ferroelectrics
Jiesu Wang, Hongbao Yao, Kuijuan Jin +12
Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectr…
Giant photoinduced lattice distortion in oxygen-vacancy ordered SrCoO2.5 thin films
Bingbing Zhang, Xu He, Jiali Zhao +8
Despite of the tremendous efforts spent on the oxygen vacancy migration in determining the property optimization of oxygen-vacancy enrichment transition metal oxides, few has focus…
Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ
Weiwei Li, Qian He, Le Wang +27
Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress…
Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO
Zhong Sun, Yonggang Zhao, Min He +9
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity i…
Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy
Yan Yin, Zengguang Cheng, Li Wang +2
Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditio…
Oxygen-Vacancy-Induced Antiferromagnetism to Ferromagnetism Transformation in Multiferroic Thin Films
Weiwei Li, Run Zhao, Le Wang +15
Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-δ (EBTO3-δ) thin films have been investigated using a combination of experimental measurements and first-princ…