50 citations · 82 across the 2 of their papers we have counts for
5 papers
Low-Temperature 2D/2D Ohmic Contacts in WSe Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition
L. J. Stanley, Hsun-Jen Chuang, Zhixian Zhou +4
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating t…
Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors
Zhibin Gao, Zhixian Zhou, David Tomanek
In search of an improved strategy to form low resistance contacts to MoS2 and related semiconducting transition metal dichalcogenides, we use ab initio density functional electroni…
Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
Thayer S. Walmsley, Bhim Chamlagain, Tianjiao Wang +2
We study the rise and decay times in BP-MoS2 heterojunctions through gate- and wavelength-dependent scanning photocurrent measurements. Our results have shown that the Schottky bar…
Thermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors
Bhim Chamlagain, Qingsong Cui, Sagar Paudel +3
We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assemb…
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang +6
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron…