Understanding the anisotropic response of ${\hat{I}}^2$-Ga${}_2$O${}_3$ to ion implantation

Duarte Magalhães Esteves, Ru He, Sérgio Magalhães +8

While ${\hat{I}}^2$-Ga${}_2$O${}_3$ is considered a promising wide bandgap semiconductor, the impact of ion-induced defect formation and anisotropic elasticity remains poorly understood. Here,…