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Ultra-Wide Bandgap Gallium Oxide Films: UV-Luminescence and Phonon Dynamics at Extreme Temperatures
Isiaka Lukman, Matthew D. McCluskey, Leah Bergman
-GaO is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV…
Structure and mechanical properties of monolayer amorphous carbon and boron nitride
Xi Zhang, Yu-Tian Zhang, Yun-Peng Wang +4
Amorphous materials exhibit various characteristics that are not featured by crystals and can sometimes be tuned by their degree of disorder (DOD). Here, we report results on the m…
Structure prediction and characterization of CuI-based ternary -type transparent conductors
Michael Seifert, Tomáš Rauch, Miguel A. L. Marques +1
Zincblende copper iodide has attracted significant interest as a potential material for transparent electronics, thanks to its exceptional light transmission capabilities in the vi…