collaborators

5 papers

physics.ins-det2026

Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology

Gianluca Aglieri Rinella, Luca Aglietta, Matias Antonelli +44

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and preci…

physics.ins-det2026

Characterization of the H2M Monolithic CMOS Sensor

Rafael Ballabriga, Eric Buschmann, Michael Campbell +29

The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addre…

physics.ins-det2025

Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: the monolithic stitched sensor (MOSS)

Omar Abdelrahman, Gianluca Aglieri Rinella, Luca Aglietta +136

This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be install…

physics.ins-det2025

The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology

Sara Ruiz Daza, Rafael Ballabriga, Eric Buschmann +28

The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensor…

physics.ins-det2025

Impact of the circuit layout on the charge collection in a monolithic pixel sensor

Corentin Lemoine, Rafael Ballabriga, Eric Buschmann +28

CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors fo…