4 papers · 1 filter
Melting behavior and dynamical properties of Cr2Ge2Te6 phase-change material
Suyang Sun, Yihui Jiang, Riccardo Mazzarello +1
Cr2Ge2Te6 (CrGT) is known as an intrinsic ferromagnetic semiconductor and a promising candidate for phase-change memory applications. In amorphous CrGT, Cr atoms form non-defective…
Amorphous phase-change memory alloy with no resistance drift
Xiaozhe Wang, Ruobing Wang, Suyang Sun +12
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical re…
Spin glass behavior in amorphous CrSiTe3 alloy
Xiaozhe Wang, Jiayue Wang, Yihui Jiang +4
Owing to the intrinsically high crystallization temperatures, layered phase-change materials, such as CrGeTe3 and InGeTe3, are attracting attention for embedded memory applications…
Ab initio investigation of layered TMGeTe3 alloys for phase-change applications
Yihui Jiang, Suyang Sun, Hanyi Zhang +4
Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to i…