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cond-mat.mtrl-sci2026
Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
Hossein Zandipour, Felix Kaps, Robin Buschbeck +19
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant conc…
cond-mat.mtrl-sci2025
Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy
Niclas S. Mueller, Alexander P. Fellows, Ben John +13
Hexagonal boron nitride (hBN) is an important 2D material for van der Waals heterostructures, single photon emitters, and infrared nanophotonics. The optical characterization of mo…