Chuan Li

collaborators

3 papers

cond-mat.mes-hall2026

Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd $_{3}$ As $_{2}$ nanowires

Yan-Liang Hou, An-Qi Wang, Na Li +4

The intrinsic Josephson diode effect (JDE) has recently attracted considerable attention due to its sensitivity to broken symmetries in Josephson junctions, offering a powerful pro…

cond-mat.mes-hall2026

Coexisting topological hinges and 1D Rashba states in Bi $_{0.97}$ Sb $_{0.03}$ revealed by the Josephson effect

Biplab Bhattacharyya, Stijn R. de Wit, Zhen Wu +4

Second-order topological insulating (SOTI) states in three-dimensional materials are helical one-dimensional hinge states. Inducing superconductivity in these states leads to gaple…

cond-mat.mes-hall2025

Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$

Feike van Veen, Sofie KÃ¶lling, Stijn R. de Wit +4

We study the three-dimensional topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state pen…

Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd3​As2​ nanowires

Coexisting topological hinges and 1D Rashba states in Bi0.97​Sb0.03​ revealed by the Josephson effect

Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi1−x​Sbx​)2​Te3​

Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd $_{3}$ As $_{2}$ nanowires

Coexisting topological hinges and 1D Rashba states in Bi $_{0.97}$ Sb $_{0.03}$ revealed by the Josephson effect

Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$