158 citations · 4.3k across the 205 of their papers we have counts for
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Thermodynamics of Electromechanically-Coupled Mixed Ionic-Electronic Conductors: Deformation potential, Vegard strains and Flexoelectric effect
A. N. Morozovska, E. A. Eliseev, A. K. Tagantsev +3
Strong coupling among external voltage, electrochemical potentials, concentrations of electronic and ionic species, and strains is a ubiquitous feature of solid state mixed ionic-e…
Anion vacancy driven magnetism in incipient ferroelectric SrTiO3 and KTaO3 nanoparticles
E. A. Eliseev, A. N. Morozovska, M. D. Glinchuk +1
Based on our analytical results [http://arxiv.org/abs/1006.3670], we predict that undoped nanoparticles (size <10-100nm) of incipient ferroelectrics without any magnetic ions can b…
Landau-Ginzburg-Devonshire theory for electromechanical hysteresis loop formation in piezoresponse force microscopy of thin films
A. N. Morozovska, E. A. Eliseev, S. L. Bravina +1
Electromechanical hysteresis loop formation in piezoresponse force microscopy of thin ferroelectric films is studied with special emphasis on the effects of tip size and film thick…
Complete symmetry analyses of the surface-induced piezomagnetic, piezoelectric and linear magnetoelectric effects
Eugene A. Eliseev
The impact of the surface on the magnetic symmetry is studied. It is shown how symmetry breaking transforms the "seeding" 90 bulk magnetic classes, which include 66 piezomagnetic c…
Strain-voltage and current-voltage Scanning Probe Microscopy (SPM) response of ionic semiconductor thin films: probing of deformation potential
A. N. Morozovska, E. A. Eliseev, S. L. Bravina +1
We performed analytical calculations of the current-voltage and strain-voltage response of the heterostructure like "charged SPM tip electrode / gap / ionic-semiconductor film" cau…
Surface-induced magnetism of the solids with impurities and vacancies
A. N. Morozovska, E. A. Eliseev, M. D. Glinchuk +1
Using the quantum-mechanical approach combined with the image charge method we calculated the lowest energy levels of the impurities and neutral vacancies with two electrons or hol…