N. P. Stepina

activity

20122023

most citedNonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

4 citations · 5 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2023★ 1 cited

Indication of novel magnetoresistance mechanism in (Bi,Sb) $_{2}$ (Te,Se) $_{3}$ 3D topological insulator thin films

N. P. Stepina, A. O. Bazhenov, A. V. Shumilin +5

Electron states with the spin-momentum-locked Dirac dispersion at the surface of a three-dimensional (3D) topological insulator are known to lead to weak antilocalization (WAL), i.…

cond-mat.mes-hall2015

Simultaneous Localization of Electrons in different $Δ$ -valleys in Ge/Si Quantum Dot Structures

Aigul Zinovieva, Natalia Stepina, Anatoly Dvurechenskii +4

In the present work the possibility of simultaneous localization of two electrons in $Δ^{100}$ and $Δ^{001}$ valleys in ordered structures with Ge/Si(001) quantum dots (QD) was ver…

cond-mat.mes-hall2012★ 4 cited

Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

I. L. Drichko, A. M. Diakonov, V. A. Malysh +6

Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a…

Indication of novel magnetoresistance mechanism in (Bi,Sb)2​(Te,Se)3​ 3D topological insulator thin films

Simultaneous Localization of Electrons in different Δ-valleys in Ge/Si Quantum Dot Structures

Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

Indication of novel magnetoresistance mechanism in (Bi,Sb) $_{2}$ (Te,Se) $_{3}$ 3D topological insulator thin films

Simultaneous Localization of Electrons in different $Δ$ -valleys in Ge/Si Quantum Dot Structures