2 papers
cond-mat.mes-hall2026
Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors
Tae Hyung Kim, Juho Lee, Yong-Hoon Kim
As semiconductor devices approach the sub-2 nm technology node, identifying the quantum-mechanical limits of contact-resistance scaling becomes imperative; however, the transition…
cond-mat.mes-hall2024
A New Direction for First-Principles Device Simulations
Yong-Hoon Kim, Ryong-Gyu Lee
The continued miniaturization of semiconductor devices, represented by Moore's law, has reached the atomic scale limit, requiring nanoscale quantum mechanical effects to be include…