3 papers
cond-mat.mtrl-sci2026
Sequential Quenching to Predict Semiconductor Defect Concentrations from Formation & Migration Energies: The Case of CdTe:As Doping
Khandakar Aaditta Arnab, Intuon Chatratin, Anderson Janotti +1
Defect concentrations in semiconductors are strongly influenced by thermal history during growth and cooldown, yet most defect calculations assume either instantaneous quenching fr…
cond-mat.mtrl-sci2026
Impacts of Fermi Level Pinning at Hole-Selective Contacts in CdSeTe/CdTe Solar Cells
Ariful Islam, Nathan D. Rock, Kh. Aaditta Arnab +3
P-type doped CdTe free surfaces Schottky contacts, and even interfaces with isostructural p-ZnTe frequently exhibit downward band bending and moderate to high recombination velocit…
cond-mat.mtrl-sci2025
Quantitative Modeling of Point Defects in -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics
Khandakar Aaditta Arnab, Megan Stephens, Isaac Maxfield +5
B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and hi…