activity
20122025
most citedSelf-regulation mechanism for charged point defects in hybrid halide perovskites

617 citations · 1.1k across the 8 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2025

Defect-Limited Efficiency of Pnictogen Chalcohalide Solar Cells

Cibrán López, Seán R. Kavanagh, Pol Benítez +4

Pnictogen chalcohalides (MChX) have recently emerged as promising nontoxic and environmentally friendly photovoltaic absorbers, combining strong light absorption coefficients with…

cond-mat.mtrl-sci20251 cited

Direct Joule-Heated Non-Equilibrium Synthesis Enables High Performing Thermoelectrics

Chenguang Zhang, Jose Recatala-Gomez, Zainul Aabdin +20

High-throughput synthesis of bulk inorganic materials is crucial for accelerating functional materials discovery but is hindered by slow, energy-intensive solid-state methods. We i…

cond-mat.mtrl-sci2025

Chalcogen Vacancies Rule Charge Recombination in Pnictogen Chalcohalide Solar-Cell Absorbers

Cibrán López, Seán R. Kavanagh, Pol Benítez +4

Pnictogen chalcohalides (MChX, M = Bi, Sb; Ch = S, Se; X = I, Br) represent an emerging class of nontoxic photovoltaic absorbers, valued for their favorable synthesis conditions an…

cond-mat.mtrl-sci202482 cited

doped: Python toolkit for robust and repeatable charged defect supercell calculations

Seán R. Kavanagh, Alexander G. Squires, Adair Nicolson +6

Defects are a universal feature of crystalline solids, dictating the key properties and performance of many functional materials. Given their crucial importance yet inherent diffic…

cond-mat.mtrl-sci2024

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Yuchen Fu, Hugh Lohan, Marcello Righetto +14

Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites…

cond-mat.mtrl-sci201487 cited

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

J. Buckeridge, C. R. A. Catlow, D. O. Scanlon +6

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes i…